Categorical Exclusion Determinations: Multiple Locations

Vertical GaN Power Transistors Using Controlled Spalling for Substrate Heterogeneity CX(s) Applied: B3.6Date: 02/28/2014 Location(s): Multiple LocationsOffices(s): Advanced Research Projects Agency-Energy

Vertical GaN Transistors on Bulk GaN Substrates CX(s) Applied: B3.6Date: 02/19/2014 Location(s): Multiple LocationsOffices(s): Advanced Research Projects Agency-Energy

Current Aperture Vertical Electron Transistor Device Architectures for Efficient Power Switching CX(s) Applied: B3.6Date: 02/12/2014 Location(s): Multiple LocationsOffices(s): Advanced Research Projects Agency-Energy

High-Power Vertical-Junction Field-Effect Transistors Fabricated on Low-Dislocation-Density GaN by Epitaxial Lift-Off CX(s) Applied: B3.6Date: 02/04/2014 Location(s): Multiple LocationsOffices(s): Advanced Research Projects Agency-Energy

Advanced Manufacturing and Performance Enhancements for Reduced Cost Silicon Carbide MOSFETS CX(s) Applied: B3.6Date: 01/30/2014 Location(s): Multiple LocationsOffices(s): Advanced Research Projects Agency-Energy

Transformational GaN Substrate Technology CX(s) Applied: B3.6Date: 01/27/2014 Location(s): Multiple LocationsOffices(s): Advanced Research Projects Agency-Energy

Low-Cost Gallium Nitride Vertical Transistor CX(s) Applied: B3.6Date: 01/27/2014 Location(s): Multiple LocationsOffices(s): Advanced Research Projects Agency-Energy

High-Quality, Low-Cost GaN Single Crystal Substrates for High-Power Devices CX(s) Applied: B3.6Date: 01/27/2014 Location(s): Multiple LocationsOffices(s): Advanced Research Projects Agency-Energy

GaN Homoepitaxial Wafers by Vapor Phase Epitaxy on Low-Cost, High-Quality Ammonothermal GaN Substrates CX(s) Applied: B3.6Date: 01/24/2014 Location(s): Multiple LocationsOffices(s): Advanced Research Projects Agency-Energy

Large-Area, Low-Cost Bulk GaN Substrates for Power Electronics CX(s) Applied: B3.6Date: 01/03/2014 Location(s): Multiple LocationsOffices(s): Advanced Research Projects Agency-Energy