CX-102057: Characterization of Performance Degradation Mechanisms in Low-Cost High-Throughput DI-O3 Layer for Passivated Contact Silicon Solar Cells

Award Number: DE-EE0009367, CX(s) Applied: A9, B3.6, Solar Energy Technologies Office, Location(s): NJ, Office(s): Golden Field Office

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February 24, 2021
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Award Number: DE-EE0009367
CX(s) Applied: A9, B3.6
Solar Energy Technologies Office
Location(s): NJ
Office(s): Golden Field Office

The U.S. Department of Energy (DOE) is proposing to provide federal funding to Rutgers, The State University of New Jersey to develop and characterize a deionized ozonated oxide (DI-O3) layer for application on solar cells. This would be tested for performance related to growth rate, uniformity, reproducibility, defect density, pinhole density, and film integrity. Based on these results, a DI-O3 layer would be applied and tested on passivated contact (PC) structures to exhibit that DI-O3 can be used as a tunneling film in PC silicon and thin film solar cells.