CX-101998: Development of organic-inorganic hybrid selective layers via vapor phase infiltration to enhance the durability of perovskite solar cells

Award Number: DE-EE0009369
CX(s) Applied: A9, B3.6
Solar Energy Technologies Office
Location(s): GA
Office(s): Golden Field Office

The U.S. Department of Energy (DOE) is proposing to provide funding to Georgia Institute of Technology (Georgia Tech) to develop a novel technique for the synthesis of thin film layers for perovskite solar cell applications. Metal oxide clusters would be incorporated into thin films through a vapor phase infiltration (VPI) process to inhibit crystallization and prevent moisture degradation.