CX-025958: Massachusetts Institute of Technology-8 inch GaN-on-Si Super-Junction Devices for Next Generation Power Electronics

Funding will support the project team's small-scale research and development of a new generation of gallium nitride (GaN) power devices, vertical G…

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May 2, 2022
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Funding will support the project team's small-scale research and development of a new generation of gallium nitride (GaN) power devices, vertical GaN super-junction diodes and transistors, with a goal to break the theoretical limit of today's GaN unipolar power devices.