CX-032237: Single Crystal Silicon Ingot Growth Using Continuous Czochralski Method

The U.S. Department of Energy (DOE) is proposing to provide federal funding to Ubiquity Solar Si-PV Division Inc. (USSI) to develop the continuous …

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October 9, 2024
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The U.S. Department of Energy (DOE) is proposing to provide federal funding to Ubiquity Solar Si-PV Division Inc. (USSI) to develop the continuous czochralski (CCz) method of manufacturing silicon ingots in order to decrease the cost of manufacturing and demonstrate the process with larger ingots and wafers.