CX-101757: Development of a Low-Cost Single Crystal Silicon Substrate Process for >23% Solar Cells

Award Number: DE-EE0008971
CX(s) Applied: A9, B1.31, B3.6
Solar Energy Technologies Office
Location(s): MA
Office(s): Golden Field Office

The U.S. Department of Energy (DOE) is proposing to provide funding to Leading Edge Crystal Technologies (LECT) to develop a novel process for the production of silicon wafers. Specifically, LECT would use a crystalgrowth process, the Float Silicon Method, to produce silicon wafers. A silicon crystal growth furnace would be developed and commissioned for use in the project. The project would be completed over three Budget Periods (BPs), with a Go/No-Go Decision point in between each BP.