Novel Materials Structure for Efficient and Cost-Effective Direct Emission Solid-State Lighting

Lead Performer: Monde Wireless – Goleta, CA
Partners: University of Michigan, University of California–Santa Barbara
DOE Total Funding: $199,949
Project Term: June 28, 2021 – March 25, 2022
Funding Type: SBIR

PROJECT OBJECTIVE

Direct emission color-mixed lighting based on red-green-blue-amber LEDs could reach efficacies of 325 lumen per watt (lm/W), provided the “green efficiency gap” is closed. Achieving this will require materials science breakthroughs for emitters in the range of amber 570 nm – 590 nm while simultaneously improving the droop performance of the devices at real-life, high operating current densities and temperatures. This project aims to demonstrate a novel, low defect density materials platform to enable the fabrication of efficient, amber-emitting indium gallium nitride (InGaN) multiple quantum-well heterostructures.

Monde Wireless, in partnership with the University of Michigan and the University of California, Santa Barbara, is working to develop InGaN substrates with low defect densities. Amber-emitting InGaN multiple quantum-well structures grown on these substrates should demonstrate a high internal quantum efficiency. Ultimately, the project will lay the groundwork for the development of efficient amber LEDs with high external quantum efficiencies.

PROJECT IMPACT

The ultimate objective of the work is high-efficiency amber InGaN LEDs, which have so far proven elusive. Beyond the energy savings in lighting systems, project advancements would also benefit emerging displays, thus significantly increasing the energy savings potential. If successful, this work could remove a major roadblock to the production of amber LEDs, which have the potential to increase the efficiency of LED lighting by up to 27% through direct emission color-mixed lighting.

CONTACTS

DOE Technology Manager: Brian Walker, [email protected]
Lead Performer: Bernd Keller, Monde Wireless